Deposition of NiFe(200) and NiFe(111) textured films onto Si/SiO2 substrates by DC magnetron sputtering


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The effect of substrate temperature Tsub and bias voltage Ubias on the texture of NiFe films with thickness d ∼ 30–340 nm deposited by DC magnetron sputtering onto Si(111)/SiO2 substrates under working gas pressure ∼ 0.2 Pa has been investigated. It has been demonstrated that films grown at room substrate temperature have the (111) texture that is refined under a negative bias voltage. The deposition of films onto a grounded (Ubias ∼ 0) substrate heated to Tsub ∼ 440–640 K results in the formation of textured NiFe(200) films.

Sobre autores

A. Dzhumaliev

Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch); Chernyshevsky Saratov State University

Autor responsável pela correspondência
Email: dzhas@yandex.ru
Rússia, ul. Zelenaya 38, Saratov, 410019; ul. Astrakhanskaya 83, Saratov, 410012

Yu. Nikulin

Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch); Chernyshevsky Saratov State University

Email: dzhas@yandex.ru
Rússia, ul. Zelenaya 38, Saratov, 410019; ul. Astrakhanskaya 83, Saratov, 410012

Yu. Filimonov

Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch); Chernyshevsky Saratov State University; Gagarin State Technical University of Saratov

Email: dzhas@yandex.ru
Rússia, ul. Zelenaya 38, Saratov, 410019; ul. Astrakhanskaya 83, Saratov, 410012; ul. Politekhnicheskaya 77, Saratov, 410054

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