Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure


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The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume and number of radiation-induced defects in a cluster during its formation are calculated. The generation rates of nonequilibrium carriers and amplitude-temporal dependences of pulses of ionization currents in test Schottky diodes with hyperhigh frequencies are found theoretically.

作者简介

I. Zabavichev

Lobachevsky State University of Nizhny Novgorod; Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics “Sedakov Scientific Research Institute of Measurement Systems”

编辑信件的主要联系方式.
Email: zabavichev.rf@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

A. Potehin

Lobachevsky State University of Nizhny Novgorod; Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics “Sedakov Scientific Research Institute of Measurement Systems”

Email: zabavichev.rf@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

A. Puzanov

Lobachevsky State University of Nizhny Novgorod; Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics “Sedakov Scientific Research Institute of Measurement Systems”

Email: zabavichev.rf@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

S. Obolenskiy

Lobachevsky State University of Nizhny Novgorod; Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics “Sedakov Scientific Research Institute of Measurement Systems”

Email: zabavichev.rf@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

V. Kozlov

Institute for Physics of Microstructures, Russian Academy of Sciences

Email: zabavichev.rf@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603087

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