On the photoconductivity of TlInSe2
- 作者: Ismailov N.D.1, Abilov C.I.1, Gasanova M.S.1
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隶属关系:
- Azerbaijan Technical University
- 期: 卷 51, 编号 5 (2017)
- 页面: 632-635
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://ogarev-online.ru/1063-7826/article/view/199893
- DOI: https://doi.org/10.1134/S1063782617050104
- ID: 199893
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详细
The current–voltage (I–V) and photocurrent–light intensity (Ipc–Φ) characteristics and the photoconductivity relaxation kinetics of TlInSe2 single crystals are investigated. Anomalously long relaxation times (τ ≈ 103 s) and some other specific features of the photoconductivity are observed, which are explained within the barrier theory of inhomogeneous semiconductors. The heights of the drift and recombination barriers are found to be, respectively, Edr ≈ 0.1 eV and Er ≈ 0.45 eV.
作者简介
N. Ismailov
Azerbaijan Technical University
编辑信件的主要联系方式.
Email: ismailovnamik@yahoo.com
阿塞拜疆, Baku, Az-1073
Ch. Abilov
Azerbaijan Technical University
Email: ismailovnamik@yahoo.com
阿塞拜疆, Baku, Az-1073
M. Gasanova
Azerbaijan Technical University
Email: ismailovnamik@yahoo.com
阿塞拜疆, Baku, Az-1073
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