Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation

E. A. Tarasova; A. V. Khananova; S. V. Obolensky; V. E. Zemlyakov; Yu. N. Sveshnikov; V. I. Egorkin; V. A. Ivanov; G. V. Medvedev; D. S. Smotrin

doi:10.1134/S1063782616030222

Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation

作者: Tarasova E.A.¹, Khananova A.V.¹, Obolensky S.V.¹, Zemlyakov V.E.², Sveshnikov Y.N.³, Egorkin V.I.³, Ivanov V.A.⁴, Medvedev G.V.⁴, Smotrin D.S.¹^,4
隶属关系:
1. Lobachevsky State University of Nizhny Novgorod
2. Institute of Electronic Engineering “MIET”
3. JSC Elma-Malachit
4. JSC RPE “Salut”
期: 卷 50, 编号 3 (2016)
页面: 326-333
栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
URL: https://ogarev-online.ru/1063-7826/article/view/196873
DOI: https://doi.org/10.1134/S1063782616030222
ID: 196873

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The results of experimental studies of the parameters of GaN and GaAs structures before and after γ-neutron irradiation are reported. A special set of test diodes making it possible to reduce the error in the results of measuring the parameters of the structures, which is important in the design and optimization of the structure of semiconductor devices, is suggested.