On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm


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Аннотация

The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold and gain characteristics of stripe laser diodes with active regions based on “thin” quantum wells with a lattice–substrate mismatch of +1.0% show that the quantum wells under study exhibit a high modal gain of 11 cm–1 and a low transparency current density of 46 A/cm2 per quantum well.

Авторлар туралы

I. Novikov

Connector Optics LLC; National Research University of Information Technologies, Mechanics and Optics

Email: anton@beam.ioffe.ru
Ресей, ul. Domostroitel’naya 16B, St. Petersburg, 194292; pr. Kronverkskii 49, St. Petersburg, 197101

L. Karachinsky

Connector Optics LLC; National Research University of Information Technologies, Mechanics and Optics

Email: anton@beam.ioffe.ru
Ресей, ul. Domostroitel’naya 16B, St. Petersburg, 194292; pr. Kronverkskii 49, St. Petersburg, 197101

E. Kolodeznyi

National Research University of Information Technologies, Mechanics and Optics

Email: anton@beam.ioffe.ru
Ресей, pr. Kronverkskii 49, St. Petersburg, 197101

V. Bougrov

National Research University of Information Technologies, Mechanics and Optics

Email: anton@beam.ioffe.ru
Ресей, pr. Kronverkskii 49, St. Petersburg, 197101

A. Kurochkin

Connector Optics LLC; National Research University of Information Technologies, Mechanics and Optics

Email: anton@beam.ioffe.ru
Ресей, ul. Domostroitel’naya 16B, St. Petersburg, 194292; pr. Kronverkskii 49, St. Petersburg, 197101

A. Gladyshev

Connector Optics LLC; National Research University of Information Technologies, Mechanics and Optics

Email: anton@beam.ioffe.ru
Ресей, ul. Domostroitel’naya 16B, St. Petersburg, 194292; pr. Kronverkskii 49, St. Petersburg, 197101

A. Babichev

Connector Optics LLC; National Research University of Information Technologies, Mechanics and Optics

Email: anton@beam.ioffe.ru
Ресей, ul. Domostroitel’naya 16B, St. Petersburg, 194292; pr. Kronverkskii 49, St. Petersburg, 197101

I. Gadzhiev

National Research University of Information Technologies, Mechanics and Optics; Ioffe Physical–Technical Institute

Email: anton@beam.ioffe.ru
Ресей, pr. Kronverkskii 49, St. Petersburg, 197101; ul. Politekhnicheskaya 26, St. Petersburg, 194021

M. Buyalo

National Research University of Information Technologies, Mechanics and Optics; Ioffe Physical–Technical Institute

Email: anton@beam.ioffe.ru
Ресей, pr. Kronverkskii 49, St. Petersburg, 197101; ul. Politekhnicheskaya 26, St. Petersburg, 194021

Yu. Zadiranov

Ioffe Physical–Technical Institute

Email: anton@beam.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. Usikova

Ioffe Physical–Technical Institute

Хат алмасуға жауапты Автор.
Email: anton@beam.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

Yu. Shernyakov

Ioffe Physical–Technical Institute

Email: anton@beam.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. Savelyev

National Research University of Information Technologies, Mechanics and Optics

Email: anton@beam.ioffe.ru
Ресей, pr. Kronverkskii 49, St. Petersburg, 197101

I. Nyapshaev

National Research University of Information Technologies, Mechanics and Optics

Email: anton@beam.ioffe.ru
Ресей, pr. Kronverkskii 49, St. Petersburg, 197101

A. Egorov

Connector Optics LLC; National Research University of Information Technologies, Mechanics and Optics

Email: anton@beam.ioffe.ru
Ресей, ul. Domostroitel’naya 16B, St. Petersburg, 194292; pr. Kronverkskii 49, St. Petersburg, 197101

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