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Author Details

Samsonenko, Yu. B.

Issue Section Title File
Vol 50, No 5 (2016) Physics of Semiconductor Devices Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
Vol 50, No 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
Vol 50, No 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
Vol 52, No 1 (2018) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases
Vol 52, No 4 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources
Vol 52, No 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon
Vol 52, No 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. QUANTUM WELLS AND QUANTUM DOTS Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate