Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources


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III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

Sobre autores

G. Cirlin

St. Petersburg Academic University; ITMO University; Institute for Analytical Instrumentation; Peter the Great Polytechnic University

Autor responsável pela correspondência
Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103; St. Petersburg, 195251

R. Reznik

St. Petersburg Academic University; ITMO University; Institute for Analytical Instrumentation; Peter the Great Polytechnic University

Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103; St. Petersburg, 195251

I. Shtrom

St. Petersburg Academic University; Institute for Analytical Instrumentation

Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103

A. Khrebtov

St. Petersburg Academic University; ITMO University

Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101

Yu. Samsonenko

St. Petersburg Academic University; ITMO University; Institute for Analytical Instrumentation

Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103

S. Kukushkin

Institute of Problems of Mechanical Engineering

Email: cirlin@beam.ioffe.ru
Rússia, St. Petersburg, 199178

T. Kasama

DTU Photonics

Email: cirlin@beam.ioffe.ru
Alemanha, Denmark, 2800

N. Akopian

DTU Photonics

Email: cirlin@beam.ioffe.ru
Alemanha, Denmark, 2800

L. Leonardo

DTU Photonics

Email: cirlin@beam.ioffe.ru
Alemanha, Denmark, 2800

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