Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon


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Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.

作者简介

G. Cirlin

St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; ITMO University

编辑信件的主要联系方式.
Email: cirlin@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101

I. Shtrom

St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute

Email: cirlin@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021

R. Reznik

St. Petersburg Academic University, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University

Email: cirlin@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 195251

Yu. Samsonenko

St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation

Email: cirlin@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 190103

A. Khrebtov

St. Petersburg Academic University, Russian Academy of Sciences

Email: cirlin@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

A. Bouravleuv

St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute

Email: cirlin@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021

I. Soshnikov

St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute; St. Petersburg Electrotechnical University LETI

Email: cirlin@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021; St. Petersburg, 197376

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