| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 9 (2016) |
Electronic Properties of Semiconductors |
Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors |
|
| Volume 51, Nº 6 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Structural features of Sm1–xEuxS thin polycrystalline films |
|
| Volume 52, Nº 1 (2018) |
Surfaces, Interfaces, and Thin Films |
Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGdxS Thin Films |
|
| Volume 52, Nº 2 (2018) |
Spectroscopy, Interaction with Radiation |
Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range |
|
| Volume 52, Nº 4 (2018) |
Article |
Investigation of the Dielectric Permittivity and Electrical Conductivity of Ce2S3 |
|
| Volume 53, Nº 2 (2019) |
Electronic Properties of Semiconductors |
Features of the Properties of Rare-Earth Semiconductors |
|
| Volume 53, Nº 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn |
|
| Volume 53, Nº 11 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Spectra of SmS Films in the Far- and Mid-Infrared Regions |
|
