Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors
- Авторы: Kaminskii V.V.1, Kazanin M.M.1, Romanova M.V.1, Kamenskaya G.A.1, Sharenkova N.V.1
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Учреждения:
- Ioffe Physical–Technical Institute
- Выпуск: Том 50, № 9 (2016)
- Страницы: 1141-1144
- Раздел: Electronic Properties of Semiconductors
- URL: https://ogarev-online.ru/1063-7826/article/view/197794
- DOI: https://doi.org/10.1134/S1063782616090116
- ID: 197794
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Аннотация
The electrical parameters of polycrystalline Sm1–xEuxS compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity x. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of T = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect.
Об авторах
V. Kaminskii
Ioffe Physical–Technical Institute
Автор, ответственный за переписку.
Email: vladimir.kaminski@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Kazanin
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Romanova
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
Россия, St. Petersburg, 194021
G. Kamenskaya
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Sharenkova
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
Россия, St. Petersburg, 194021
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