Email this article Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures
- Authors: Kabalnov Y.A.1, Trufanov A.N.1, Obolensky S.V.2
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Affiliations:
- Sedakov Scientific Research Institute of Measurement Systems
- Lobachevsky University of Nizhny Novgorod
- Issue: Vol 53, No 3 (2019)
- Pages: 368-374
- Section: Physics of Semiconductor Devices
- URL: https://ogarev-online.ru/1063-7826/article/view/205867
- DOI: https://doi.org/10.1134/S1063782619030084
- ID: 205867
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Abstract
The electrical properties of photodiodes based on silicon-on-sapphire structures are investigated theoretically and experimentally. It is shown that they are no worse than silicon diodes in terms of their basic parameters, while their radiation hardness is higher by an order of magnitude than that of similar diodes based on bulk silicon.
About the authors
Yu. A. Kabalnov
Sedakov Scientific Research Institute of Measurement Systems
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. N. Trufanov
Sedakov Scientific Research Institute of Measurement Systems
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
S. V. Obolensky
Lobachevsky University of Nizhny Novgorod
Author for correspondence.
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
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