Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell
- Авторлар: Svintsov A.A.1, Yakimov E.B.1,2, Dorokhin M.V.3, Demina P.B.3, Kuznetsov Y.M.3
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Мекемелер:
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
- National University of Science and Technology “MISIS”
- Lobachevsky State University of Nizhny Novgorod
- Шығарылым: Том 53, № 1 (2019)
- Беттер: 96-98
- Бөлім: Physics of Semiconductor Devices
- URL: https://ogarev-online.ru/1063-7826/article/view/205612
- DOI: https://doi.org/10.1134/S1063782619010214
- ID: 205612
Дәйексөз келтіру
Аннотация
The simulation of β-voltaic power cells consisting of a combined β-source and a converter was performed. The TiT2 compound containing the radioactive tritium isotope was selected as the source. As the converter, structures based on semiconductor materials, most commonly used in developing power cells, i.e., Si, SiC, GaAs, were considered. Using the Monte Carlo method, the main source parameters were calculated, in particular, the maximum achievable short-circuit current was estimated.
Авторлар туралы
A. Svintsov
Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: dorokhin@nifti.unn.ru
Ресей, Chernogolovka, Moscow oblast, 142432
E. Yakimov
Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences; National University of Science and Technology “MISIS”
Email: dorokhin@nifti.unn.ru
Ресей, Chernogolovka, Moscow oblast, 142432; Moscow, 119049
M. Dorokhin
Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: dorokhin@nifti.unn.ru
Ресей, Nizhny Novgorod, 603950
P. Demina
Lobachevsky State University of Nizhny Novgorod
Email: dorokhin@nifti.unn.ru
Ресей, Nizhny Novgorod, 603950
Yu. Kuznetsov
Lobachevsky State University of Nizhny Novgorod
Email: dorokhin@nifti.unn.ru
Ресей, Nizhny Novgorod, 603950
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