Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers


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The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.

Sobre autores

T. Malin

Rzhanov Institute of Semiconductor Physics

Autor responsável pela correspondência
Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090

D. Milakhin

Rzhanov Institute of Semiconductor Physics

Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090

V. Mansurov

Rzhanov Institute of Semiconductor Physics

Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090

Yu. Galitsyn

Rzhanov Institute of Semiconductor Physics

Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090

A. Kozhuhov

Rzhanov Institute of Semiconductor Physics

Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090

V. Ratnikov

Ioffe Institute

Email: mal-tv@isp.nsc.ru
Rússia, St. Petersburg, 194021

A. Smirnov

Ioffe Institute

Email: mal-tv@isp.nsc.ru
Rússia, St. Petersburg, 194021

V. Davydov

Ioffe Institute

Email: mal-tv@isp.nsc.ru
Rússia, St. Petersburg, 194021

K. Zhuravlev

Rzhanov Institute of Semiconductor Physics; Novosibirsk State University

Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090

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