Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers
- Autores: Malin T.V.1, Milakhin D.S.1, Mansurov V.G.1, Galitsyn Y.G.1, Kozhuhov A.S.1, Ratnikov V.V.2, Smirnov A.N.2, Davydov V.Y.2, Zhuravlev K.S.1,3
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Afiliações:
- Rzhanov Institute of Semiconductor Physics
- Ioffe Institute
- Novosibirsk State University
- Edição: Volume 52, Nº 6 (2018)
- Páginas: 789-796
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://ogarev-online.ru/1063-7826/article/view/203547
- DOI: https://doi.org/10.1134/S1063782618060143
- ID: 203547
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Resumo
The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.
Sobre autores
T. Malin
Rzhanov Institute of Semiconductor Physics
Autor responsável pela correspondência
Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090
D. Milakhin
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Mansurov
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090
Yu. Galitsyn
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Kozhuhov
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Ratnikov
Ioffe Institute
Email: mal-tv@isp.nsc.ru
Rússia, St. Petersburg, 194021
A. Smirnov
Ioffe Institute
Email: mal-tv@isp.nsc.ru
Rússia, St. Petersburg, 194021
V. Davydov
Ioffe Institute
Email: mal-tv@isp.nsc.ru
Rússia, St. Petersburg, 194021
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: mal-tv@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
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