effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
- 作者: Tsatsulnikov A.F.1,2, Lundin V.W.2, Zavarin E.E.2, Yagovkina M.A.2, Sakharov A.V.2, Usov S.O.1,3, Zemlyakov V.E.4, Egorkin V.I.4, Bulashevich K.A.5, Karpov S.Y.5, Ustinov V.M.1
-
隶属关系:
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Ioffe Physical–Technical Institute
- Saint-Petersburg State University of Information Technologies, Mechanics and Optics
- National Research University of Electronic Technology (MIET)
- “Soft-Impact” Ltd.
- 期: 卷 50, 编号 10 (2016)
- 页面: 1383-1389
- 栏目: Physics of Semiconductor Devices
- URL: https://ogarev-online.ru/1063-7826/article/view/198123
- DOI: https://doi.org/10.1134/S1063782616100237
- ID: 198123
如何引用文章
详细
The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance.
作者简介
A. Tsatsulnikov
Submicron Heterostructures for Microelectronics Research and Engineering Center; Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: andrew@beam.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. Lundin
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
E. Zavarin
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
M. Yagovkina
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Sakharov
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Usov
Submicron Heterostructures for Microelectronics Research and Engineering Center; Saint-Petersburg State University of Information Technologies, Mechanics and Optics
Email: andrew@beam.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Sablinskaya 14, St. Petersburg, 197101
V. Zemlyakov
National Research University of Electronic Technology (MIET)
Email: andrew@beam.ioffe.ru
俄罗斯联邦, 4806 proezd 5, Zelenograd, Moscow oblast, 124498
V. Egorkin
National Research University of Electronic Technology (MIET)
Email: andrew@beam.ioffe.ru
俄罗斯联邦, 4806 proezd 5, Zelenograd, Moscow oblast, 124498
K. Bulashevich
“Soft-Impact” Ltd.
Email: andrew@beam.ioffe.ru
俄罗斯联邦, ul. Engelsa 27, korp. 12v, St. Petersburg, 194156
S. Karpov
“Soft-Impact” Ltd.
Email: andrew@beam.ioffe.ru
俄罗斯联邦, ul. Engelsa 27, korp. 12v, St. Petersburg, 194156
V. Ustinov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: andrew@beam.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
补充文件
