电邮这篇文章 Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity
- 作者: Zhuravlev A.G.1,2, Khoroshilov V.S.1,2, Alperovich V.L.1,2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- 期: 卷 105, 编号 10 (2017)
- 页面: 686-690
- 栏目: Miscellaneous
- URL: https://ogarev-online.ru/0021-3640/article/view/160330
- DOI: https://doi.org/10.1134/S0021364017100149
- ID: 160330
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详细
The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.
作者简介
A. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: alper@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
V. Khoroshilov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: alper@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
V. Alperovich
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
编辑信件的主要联系方式.
Email: alper@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
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