Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity
- Авторы: Zhuravlev A.G.1,2, Khoroshilov V.S.1,2, Alperovich V.L.1,2
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Выпуск: Том 105, № 10 (2017)
- Страницы: 686-690
- Раздел: Miscellaneous
- URL: https://ogarev-online.ru/0021-3640/article/view/160330
- DOI: https://doi.org/10.1134/S0021364017100149
- ID: 160330
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Аннотация
The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.
Об авторах
A. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: alper@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
V. Khoroshilov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: alper@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
V. Alperovich
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Автор, ответственный за переписку.
Email: alper@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
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