Enviar artigo por via de e-mail Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity
- Autores: Zhuravlev A.G.1,2, Khoroshilov V.S.1,2, Alperovich V.L.1,2
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Edição: Volume 105, Nº 10 (2017)
- Páginas: 686-690
- Seção: Miscellaneous
- URL: https://ogarev-online.ru/0021-3640/article/view/160330
- DOI: https://doi.org/10.1134/S0021364017100149
- ID: 160330
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Resumo
The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.
Sobre autores
A. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: alper@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
V. Khoroshilov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: alper@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
V. Alperovich
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Autor responsável pela correspondência
Email: alper@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
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