Email this article Physical Properties of Solid Solutions InxAl1–xN
- Authors: Brudnyi V.N.1, Vilisova M.D.1, Velikovskii L.É.1
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Affiliations:
- National Research Tomsk State University
- Issue: Vol 61, No 6 (2018)
- Pages: 1160-1166
- Section: Article
- URL: https://ogarev-online.ru/1064-8887/article/view/240690
- DOI: https://doi.org/10.1007/s11182-018-1511-6
- ID: 240690
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Abstract
The phase diagrams and the results of studies of the GaN, AlN and InN ternary solid solutions grown using the magnetron sputtering, molecular beam epitaxy, and metalorganic vapour-phase epitaxy technologies and intended for the production of ultrahigh-frequency InAlN/GaN HEMT transistors are analyzed.
About the authors
V. N. Brudnyi
National Research Tomsk State University
Author for correspondence.
Email: brudnyi@mail.tsu.ru
Russian Federation, Tomsk
M. D. Vilisova
National Research Tomsk State University
Email: brudnyi@mail.tsu.ru
Russian Federation, Tomsk
L. É. Velikovskii
National Research Tomsk State University
Email: brudnyi@mail.tsu.ru
Russian Federation, Tomsk
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