Physical Properties of Solid Solutions InxAl1–xN
- Авторлар: Brudnyi V.N.1, Vilisova M.D.1, Velikovskii L.É.1
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Мекемелер:
- National Research Tomsk State University
- Шығарылым: Том 61, № 6 (2018)
- Беттер: 1160-1166
- Бөлім: Article
- URL: https://ogarev-online.ru/1064-8887/article/view/240690
- DOI: https://doi.org/10.1007/s11182-018-1511-6
- ID: 240690
Дәйексөз келтіру
Аннотация
The phase diagrams and the results of studies of the GaN, AlN and InN ternary solid solutions grown using the magnetron sputtering, molecular beam epitaxy, and metalorganic vapour-phase epitaxy technologies and intended for the production of ultrahigh-frequency InAlN/GaN HEMT transistors are analyzed.
Негізгі сөздер
Авторлар туралы
V. Brudnyi
National Research Tomsk State University
Хат алмасуға жауапты Автор.
Email: brudnyi@mail.tsu.ru
Ресей, Tomsk
M. Vilisova
National Research Tomsk State University
Email: brudnyi@mail.tsu.ru
Ресей, Tomsk
L. Velikovskii
National Research Tomsk State University
Email: brudnyi@mail.tsu.ru
Ресей, Tomsk
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