Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide
- Authors: Kalygina V.M.1, Petrova Y.S.1, Prudaev I.A.1, Tolbanov O.P.1
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Affiliations:
- National Research Tomsk State University
- Issue: Vol 59, No 6 (2016)
- Pages: 757-761
- Section: Physics of Semiconductors and Dielectrics
- URL: https://ogarev-online.ru/1064-8887/article/view/237288
- DOI: https://doi.org/10.1007/s11182-016-0833-5
- ID: 237288
Cite item
Abstract
We present the results of studying the capacitance-voltage and conductance-voltage characteristics of the GaxOy/GaAs-based metal – oxide – semiconductor structures obtained by thermal evaporation. Influence of the annealing temperature on the characteristics of the structures is established. It is found that at long-term storage in the room atmosphere, the structures do not change their properties, which is manifested in the stability of electrical characteristics.
About the authors
V. M. Kalygina
National Research Tomsk State University
Author for correspondence.
Email: kalygina@ngs.ru
Russian Federation, Tomsk
Yu. S. Petrova
National Research Tomsk State University
Email: kalygina@ngs.ru
Russian Federation, Tomsk
I. A. Prudaev
National Research Tomsk State University
Email: kalygina@ngs.ru
Russian Federation, Tomsk
O. P. Tolbanov
National Research Tomsk State University
Email: kalygina@ngs.ru
Russian Federation, Tomsk
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