Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide


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Abstract

We present the results of studying the capacitance-voltage and conductance-voltage characteristics of the GaxOy/GaAs-based metal – oxide – semiconductor structures obtained by thermal evaporation. Influence of the annealing temperature on the characteristics of the structures is established. It is found that at long-term storage in the room atmosphere, the structures do not change their properties, which is manifested in the stability of electrical characteristics.

About the authors

V. M. Kalygina

National Research Tomsk State University

Author for correspondence.
Email: kalygina@ngs.ru
Russian Federation, Tomsk

Yu. S. Petrova

National Research Tomsk State University

Email: kalygina@ngs.ru
Russian Federation, Tomsk

I. A. Prudaev

National Research Tomsk State University

Email: kalygina@ngs.ru
Russian Federation, Tomsk

O. P. Tolbanov

National Research Tomsk State University

Email: kalygina@ngs.ru
Russian Federation, Tomsk

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