Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide

V. M. Kalygina; Yu. S. Petrova; I. A. Prudaev; O. P. Tolbanov

doi:10.1007/s11182-016-0833-5

Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide

作者: Kalygina V.M.¹, Petrova Y.S.¹, Prudaev I.A.¹, Tolbanov O.P.¹
隶属关系:
1. National Research Tomsk State University
期: 卷 59, 编号 6 (2016)
页面: 757-761
栏目: Physics of Semiconductors and Dielectrics
URL: https://ogarev-online.ru/1064-8887/article/view/237288
DOI: https://doi.org/10.1007/s11182-016-0833-5
ID: 237288

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

We present the results of studying the capacitance-voltage and conductance-voltage characteristics of the GaxOy/GaAs-based metal – oxide – semiconductor structures obtained by thermal evaporation. Influence of the annealing temperature on the characteristics of the structures is established. It is found that at long-term storage in the room atmosphere, the structures do not change their properties, which is manifested in the stability of electrical characteristics.