Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide

V. M. Kalygina; Yu. S. Petrova; I. A. Prudaev; O. P. Tolbanov

doi:10.1007/s11182-016-0833-5

Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide

Autores: Kalygina V.M.¹, Petrova Y.S.¹, Prudaev I.A.¹, Tolbanov O.P.¹
Afiliações:
1. National Research Tomsk State University
Edição: Volume 59, Nº 6 (2016)
Páginas: 757-761
Seção: Physics of Semiconductors and Dielectrics
URL: https://ogarev-online.ru/1064-8887/article/view/237288
DOI: https://doi.org/10.1007/s11182-016-0833-5
ID: 237288

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We present the results of studying the capacitance-voltage and conductance-voltage characteristics of the GaxOy/GaAs-based metal – oxide – semiconductor structures obtained by thermal evaporation. Influence of the annealing temperature on the characteristics of the structures is established. It is found that at long-term storage in the room atmosphere, the structures do not change their properties, which is manifested in the stability of electrical characteristics.