Analytical Model for Atomic-Layer Deposition of Thin Films on the Walls of Cylindrical Holes with a Relatively High Aspect Ratio
- 作者: Fadeev A.V.1, Rudenko K.V.1
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隶属关系:
- Physicotechnological Institute
- 期: 卷 63, 编号 8 (2018)
- 页面: 1228-1235
- 栏目: Physical Electronics
- URL: https://ogarev-online.ru/1063-7842/article/view/201875
- DOI: https://doi.org/10.1134/S1063784218080054
- ID: 201875
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详细
A theoretical model that predicts the thickness of a film grown on the walls of high-aspect-ratio cylindrical hole using the atomic-layer deposition is proposed. The model can be used to calculate the critical time of precursor supply needed for conformal coating of the walls. An analytical model is derived to estimate the minimum time of precursor supply versus parameters of the technological process.
作者简介
A. Fadeev
Physicotechnological Institute
编辑信件的主要联系方式.
Email: AlexVFadeev@gmail.com
俄罗斯联邦, Moscow, 117218
K. Rudenko
Physicotechnological Institute
Email: AlexVFadeev@gmail.com
俄罗斯联邦, Moscow, 117218
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