Analytical Model for Atomic-Layer Deposition of Thin Films on the Walls of Cylindrical Holes with a Relatively High Aspect Ratio
- Авторлар: Fadeev A.V.1, Rudenko K.V.1
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Мекемелер:
- Physicotechnological Institute
- Шығарылым: Том 63, № 8 (2018)
- Беттер: 1228-1235
- Бөлім: Physical Electronics
- URL: https://ogarev-online.ru/1063-7842/article/view/201875
- DOI: https://doi.org/10.1134/S1063784218080054
- ID: 201875
Дәйексөз келтіру
Аннотация
A theoretical model that predicts the thickness of a film grown on the walls of high-aspect-ratio cylindrical hole using the atomic-layer deposition is proposed. The model can be used to calculate the critical time of precursor supply needed for conformal coating of the walls. An analytical model is derived to estimate the minimum time of precursor supply versus parameters of the technological process.
Авторлар туралы
A. Fadeev
Physicotechnological Institute
Хат алмасуға жауапты Автор.
Email: AlexVFadeev@gmail.com
Ресей, Moscow, 117218
K. Rudenko
Physicotechnological Institute
Email: AlexVFadeev@gmail.com
Ресей, Moscow, 117218
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