Liquid-metal field electron source based on porous GaP


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详细

We have reported on a new method for obtaining a liquid-metal field emitter. The treatment of a porous crystal of GaP binary semiconducting compound with high-voltage pulses in a vacuum has made it possible to obtain stable structures on its surface in the form of discrete gallium clusters. These structures exhibit high emission properties, including stable currents at a level of a few microamperes, as well as the high uniformity of the distribution of emission nanocenters over the surface.

作者简介

S. Masalov

Ioffe Institute

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Email: sergeym@mail.com
俄罗斯联邦, St. Petersburg, 194021

E. Popov

Ioffe Institute

Email: sergeym@mail.com
俄罗斯联邦, St. Petersburg, 194021

A. Kolos’ko

Ioffe Institute

Email: sergeym@mail.com
俄罗斯联邦, St. Petersburg, 194021

S. Filippov

Ioffe Institute

Email: sergeym@mail.com
俄罗斯联邦, St. Petersburg, 194021

V. Ulin

Ioffe Institute

Email: sergeym@mail.com
俄罗斯联邦, St. Petersburg, 194021

V. Evtikhiev

Ioffe Institute

Email: sergeym@mail.com
俄罗斯联邦, St. Petersburg, 194021

A. Atrashchenko

ITMO University

Email: sergeym@mail.com
俄罗斯联邦, St. Petersburg, 197101

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