Liquid-metal field electron source based on porous GaP

Аннотация

We have reported on a new method for obtaining a liquid-metal field emitter. The treatment of a porous crystal of GaP binary semiconducting compound with high-voltage pulses in a vacuum has made it possible to obtain stable structures on its surface in the form of discrete gallium clusters. These structures exhibit high emission properties, including stable currents at a level of a few microamperes, as well as the high uniformity of the distribution of emission nanocenters over the surface.