Liquid-metal field electron source based on porous GaP

S. A. Masalov; E. O. Popov; A. G. Kolos’ko; S. V. Filippov; V. P. Ulin; V. P. Evtikhiev; A. V. Atrashchenko

doi:10.1134/S1063784217090171

Liquid-metal field electron source based on porous GaP

Авторы: Masalov S.A.¹, Popov E.O.¹, Kolos’ko A.G.¹, Filippov S.V.¹, Ulin V.P.¹, Evtikhiev V.P.¹, Atrashchenko A.V.²
Учреждения:
1. Ioffe Institute
2. ITMO University
Выпуск: Том 62, № 9 (2017)
Страницы: 1424-1430
Раздел: Physical Electronics
URL: https://ogarev-online.ru/1063-7842/article/view/200036
DOI: https://doi.org/10.1134/S1063784217090171
ID: 200036

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Аннотация

We have reported on a new method for obtaining a liquid-metal field emitter. The treatment of a porous crystal of GaP binary semiconducting compound with high-voltage pulses in a vacuum has made it possible to obtain stable structures on its surface in the form of discrete gallium clusters. These structures exhibit high emission properties, including stable currents at a level of a few microamperes, as well as the high uniformity of the distribution of emission nanocenters over the surface.