Enviar artigo por via de e-mail Substrate-induced bandgap in the spectrum of an epitaxial graphene layer
- Autores: Alisultanov Z.Z.1,2,3
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Afiliações:
- Amirkhanov Institute of Physics, Dagestan Science Center
- Prokhorov General Physics Institute
- Dagestan State University
- Edição: Volume 61, Nº 10 (2016)
- Páginas: 1591-1594
- Seção: Short Communications
- URL: https://ogarev-online.ru/1063-7842/article/view/198328
- DOI: https://doi.org/10.1134/S1063784216100029
- ID: 198328
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Resumo
It has been shown that a bandgap can appear in the spectrum of a graphene bilayer formed on the surface of a semiconductor. Bandgap widths have been estimated for various SiC polytypes. The predicted effect is important for the practical applications of graphene.
Sobre autores
Z. Alisultanov
Amirkhanov Institute of Physics, Dagestan Science Center; Prokhorov General Physics Institute; Dagestan State University
Autor responsável pela correspondência
Email: zaur0102@gmail.com
Rússia, ul. Yagarskogo 94, Makhachkala, 367003 Dagestan; ul. Vavilova 38, Moscow, 119991; ul. Gadzhieva 43-a, Makhachkala, 367000 Dagestan
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