Email this article Substrate-induced bandgap in the spectrum of an epitaxial graphene layer
- Authors: Alisultanov Z.Z.1,2,3
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Affiliations:
- Amirkhanov Institute of Physics, Dagestan Science Center
- Prokhorov General Physics Institute
- Dagestan State University
- Issue: Vol 61, No 10 (2016)
- Pages: 1591-1594
- Section: Short Communications
- URL: https://ogarev-online.ru/1063-7842/article/view/198328
- DOI: https://doi.org/10.1134/S1063784216100029
- ID: 198328
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Abstract
It has been shown that a bandgap can appear in the spectrum of a graphene bilayer formed on the surface of a semiconductor. Bandgap widths have been estimated for various SiC polytypes. The predicted effect is important for the practical applications of graphene.
About the authors
Z. Z. Alisultanov
Amirkhanov Institute of Physics, Dagestan Science Center; Prokhorov General Physics Institute; Dagestan State University
Author for correspondence.
Email: zaur0102@gmail.com
Russian Federation, ul. Yagarskogo 94, Makhachkala, 367003 Dagestan; ul. Vavilova 38, Moscow, 119991; ul. Gadzhieva 43-a, Makhachkala, 367000 Dagestan
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