电邮这篇文章 Substrate-induced bandgap in the spectrum of an epitaxial graphene layer
- 作者: Alisultanov Z.Z.1,2,3
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隶属关系:
- Amirkhanov Institute of Physics, Dagestan Science Center
- Prokhorov General Physics Institute
- Dagestan State University
- 期: 卷 61, 编号 10 (2016)
- 页面: 1591-1594
- 栏目: Short Communications
- URL: https://ogarev-online.ru/1063-7842/article/view/198328
- DOI: https://doi.org/10.1134/S1063784216100029
- ID: 198328
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详细
It has been shown that a bandgap can appear in the spectrum of a graphene bilayer formed on the surface of a semiconductor. Bandgap widths have been estimated for various SiC polytypes. The predicted effect is important for the practical applications of graphene.
作者简介
Z. Alisultanov
Amirkhanov Institute of Physics, Dagestan Science Center; Prokhorov General Physics Institute; Dagestan State University
编辑信件的主要联系方式.
Email: zaur0102@gmail.com
俄罗斯联邦, ul. Yagarskogo 94, Makhachkala, 367003 Dagestan; ul. Vavilova 38, Moscow, 119991; ul. Gadzhieva 43-a, Makhachkala, 367000 Dagestan
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