Enviar artigo por via de e-mail Composition and Structure of Ga1 – xNaxAs Nanolayers Produced near the GaAs Surface by Na+ Implantation
- Autores: Boltaev K.K.1, Sodikjanov Z.S.1, Tashmukhamedova D.A.1, Umirzakov B.E.1
-
Afiliações:
- Tashkent State Technical University
- Edição: Volume 62, Nº 12 (2017)
- Páginas: 1882-1884
- Seção: Physics of Nanostructures
- URL: https://ogarev-online.ru/1063-7842/article/view/200419
- DOI: https://doi.org/10.1134/S1063784217120040
- ID: 200419
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
The composition and structure of nanodimensional Ga1 – xNaxAs phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E0 = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga0.5Na0.5As–GaAs.
Sobre autores
Kh. Boltaev
Tashkent State Technical University
Autor responsável pela correspondência
Email: ftmet@rambler.ru
Uzbequistão, Universitetskaya ul. 2, Tashkent, 100095
Zh. Sodikjanov
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbequistão, Universitetskaya ul. 2, Tashkent, 100095
D. Tashmukhamedova
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbequistão, Universitetskaya ul. 2, Tashkent, 100095
B. Umirzakov
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbequistão, Universitetskaya ul. 2, Tashkent, 100095
Arquivos suplementares
