电邮这篇文章 Composition and Structure of Ga1 – xNaxAs Nanolayers Produced near the GaAs Surface by Na+ Implantation
- 作者: Boltaev K.K.1, Sodikjanov Z.S.1, Tashmukhamedova D.A.1, Umirzakov B.E.1
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隶属关系:
- Tashkent State Technical University
- 期: 卷 62, 编号 12 (2017)
- 页面: 1882-1884
- 栏目: Physics of Nanostructures
- URL: https://ogarev-online.ru/1063-7842/article/view/200419
- DOI: https://doi.org/10.1134/S1063784217120040
- ID: 200419
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详细
The composition and structure of nanodimensional Ga1 – xNaxAs phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E0 = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga0.5Na0.5As–GaAs.
作者简介
Kh. Boltaev
Tashkent State Technical University
编辑信件的主要联系方式.
Email: ftmet@rambler.ru
乌兹别克斯坦, Universitetskaya ul. 2, Tashkent, 100095
Zh. Sodikjanov
Tashkent State Technical University
Email: ftmet@rambler.ru
乌兹别克斯坦, Universitetskaya ul. 2, Tashkent, 100095
D. Tashmukhamedova
Tashkent State Technical University
Email: ftmet@rambler.ru
乌兹别克斯坦, Universitetskaya ul. 2, Tashkent, 100095
B. Umirzakov
Tashkent State Technical University
Email: ftmet@rambler.ru
乌兹别克斯坦, Universitetskaya ul. 2, Tashkent, 100095
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