Отправить статью по E-mail Composition and Structure of Ga1 – xNaxAs Nanolayers Produced near the GaAs Surface by Na+ Implantation
- Авторы: Boltaev K.K.1, Sodikjanov Z.S.1, Tashmukhamedova D.A.1, Umirzakov B.E.1
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Учреждения:
- Tashkent State Technical University
- Выпуск: Том 62, № 12 (2017)
- Страницы: 1882-1884
- Раздел: Physics of Nanostructures
- URL: https://ogarev-online.ru/1063-7842/article/view/200419
- DOI: https://doi.org/10.1134/S1063784217120040
- ID: 200419
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Аннотация
The composition and structure of nanodimensional Ga1 – xNaxAs phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E0 = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga0.5Na0.5As–GaAs.
Об авторах
Kh. Boltaev
Tashkent State Technical University
Автор, ответственный за переписку.
Email: ftmet@rambler.ru
Узбекистан, Universitetskaya ul. 2, Tashkent, 100095
Zh. Sodikjanov
Tashkent State Technical University
Email: ftmet@rambler.ru
Узбекистан, Universitetskaya ul. 2, Tashkent, 100095
D. Tashmukhamedova
Tashkent State Technical University
Email: ftmet@rambler.ru
Узбекистан, Universitetskaya ul. 2, Tashkent, 100095
B. Umirzakov
Tashkent State Technical University
Email: ftmet@rambler.ru
Узбекистан, Universitetskaya ul. 2, Tashkent, 100095
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