Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature

A. V. Kudrin; Yu. A. Danilov; V. P. Lesnikov; O. V. Vikhrova; D. A. Pavlov; Yu. V. Usov; E. A. Pitirimova; I. N. Antonov

doi:10.1134/S1063783417110178

Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature

作者: Kudrin A.V.¹^,2, Danilov Y.A.¹^,2, Lesnikov V.P.¹, Vikhrova O.V.¹, Pavlov D.A.², Usov Y.V.², Pitirimova E.A.², Antonov I.N.¹
隶属关系:
1. Research Institute of Physics and Technology
2. Lobachevsky State University
期: 卷 59, 编号 11 (2017)
页面: 2220-2222
栏目: Surface Physics, Thin Films
URL: https://ogarev-online.ru/1063-7834/article/view/201536
DOI: https://doi.org/10.1134/S1063783417110178
ID: 201536

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Epitaxial InFeSb/GaAs heterostructures were obtained by laser deposition in vacuum. Investigations by high-resolution transmission electron microscopy and microdiffraction showed that the InFeSb layers are single-crystal and do not contain additional phase inclusions. Study of their magnetotransport properties have revealed that an anomalous Hall effect and a negative magnetoresistance up to room temperature are observed in the structures.