The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed AlxInyGa1–x–yBizSb1–z/GaSb Heterostructures
- Авторы: Alfimova D.L.1, Lunina M.L.1, Lunin L.S.1,2, Pashchenko A.S.1, Kazakova A.E.2
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Учреждения:
- Southern Scientific Center
- Platov State Polytechnic University
- Выпуск: Том 60, № 7 (2018)
- Страницы: 1280-1286
- Раздел: Semiconductors
- URL: https://ogarev-online.ru/1063-7834/article/view/203345
- DOI: https://doi.org/10.1134/S1063783418070028
- ID: 203345
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Аннотация
The effect of bismuth on the structural perfection and the luminescent properties of AlxInyGa1–x–yBizSb1–z/GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.
Об авторах
D. Alfimova
Southern Scientific Center
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006
M. Lunina
Southern Scientific Center
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006
L. Lunin
Southern Scientific Center; Platov State Polytechnic University
Автор, ответственный за переписку.
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346400
A. Pashchenko
Southern Scientific Center
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006
A. Kazakova
Platov State Polytechnic University
Email: lunin_ls@mail.ru
Россия, Novocherkassk, Rostov oblast, 346400
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