Email this article The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed AlxInyGa1–x–yBizSb1–z/GaSb Heterostructures
- Authors: Alfimova D.L.1, Lunina M.L.1, Lunin L.S.1,2, Pashchenko A.S.1, Kazakova A.E.2
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Affiliations:
- Southern Scientific Center
- Platov State Polytechnic University
- Issue: Vol 60, No 7 (2018)
- Pages: 1280-1286
- Section: Semiconductors
- URL: https://ogarev-online.ru/1063-7834/article/view/203345
- DOI: https://doi.org/10.1134/S1063783418070028
- ID: 203345
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Abstract
The effect of bismuth on the structural perfection and the luminescent properties of AlxInyGa1–x–yBizSb1–z/GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.
About the authors
D. L. Alfimova
Southern Scientific Center
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
M. L. Lunina
Southern Scientific Center
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
L. S. Lunin
Southern Scientific Center; Platov State Polytechnic University
Author for correspondence.
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346400
A. S. Pashchenko
Southern Scientific Center
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
A. E. Kazakova
Platov State Polytechnic University
Email: lunin_ls@mail.ru
Russian Federation, Novocherkassk, Rostov oblast, 346400
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