Polarization effects in quantum-well In28Ga72As/GaAs heterolasers


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

The effect of externally introduced variable strains on the polarization properties of quantum-well In28Ga72As/GaAs laser radiation at room temperature is studied experimentally and theoretically. An analysis of the polarization effects at various values of the excess of the working current over the threshold is performed. Data on the energy for the splitting of the levels of light and heavy holes in the quantum well of the structure under consideration are obtained. It is experimentally proven that the effectiveness of the action of a variable strain on the polarization twist substantially increases with increasing quantum well width.

Sobre autores

L. Kulakova

Ioffe Institute

Autor responsável pela correspondência
Email: L.Kulakova@mail.ioffe.ru
Rússia, St. Petersburg, 194021

A. Lyutetskii

Ioffe Institute

Email: L.Kulakova@mail.ioffe.ru
Rússia, St. Petersburg, 194021

I. Tarasov

Ioffe Institute

Email: L.Kulakova@mail.ioffe.ru
Rússia, St. Petersburg, 194021

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2017