Electrical Properties of Organometallic Perovskite Films
- Авторлар: Ershova A.M.1,2, Ovezov M.K.1, Shcherbakov I.P.1, Aleshin A.N.1
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Мекемелер:
- Ioffe Institute
- St. Petersburg State Electrotechnical University “LETI”
- Шығарылым: Том 61, № 2 (2019)
- Беттер: 103-107
- Бөлім: Semiconductors
- URL: https://ogarev-online.ru/1063-7834/article/view/204785
- DOI: https://doi.org/10.1134/S1063783419020124
- ID: 204785
Дәйексөз келтіру
Аннотация
The electrical properties of the films of organometallic perovskites CH3NH3PbBr3 and CH3NH3PbI3 were studied. Current–voltage characteristics for the CH3NH3PbBr3 and CH3NH3PbI3 samples were measured in a temperature range of 300–80 K, from which the temperature dependences of resistivity ρ(T) having characteristic points of inflection in a range of 160–240 K were determined. The activation energies of charge carriers prior to and after points of inflection were determined. It is assumed that the observed features in the temperature dependences of resistivity (temperature at the points of inflection) correlate with the temperatures of tetragonal-to-orthorhombic phase transitions for two studied organometallic perovskites (CH3NH3PbBr3 and CH3NH3PbI3).
Авторлар туралы
A. Ershova
Ioffe Institute; St. Petersburg State Electrotechnical University “LETI”
Email: aleshin@transport.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197376
M. Ovezov
Ioffe Institute
Email: aleshin@transport.ioffe.ru
Ресей, St. Petersburg, 194021
I. Shcherbakov
Ioffe Institute
Email: aleshin@transport.ioffe.ru
Ресей, St. Petersburg, 194021
A. Aleshin
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: aleshin@transport.ioffe.ru
Ресей, St. Petersburg, 194021
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