Magnetic capacitance of the GdxBi1–xFeO3 thin films
- Авторлар: Aplesnin S.S.1,2, Kretinin V.V.1, Panasevich A.M.3, Yanushkevich K.I.3
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Мекемелер:
- Siberian State Aerospace University
- Kirensky Institute of Physics, Federal Research Center, Siberian Branch
- Scientific and Practical Materials Research Center
- Шығарылым: Том 59, № 4 (2017)
- Беттер: 667-673
- Бөлім: Semiconductors
- URL: https://ogarev-online.ru/1063-7834/article/view/200004
- DOI: https://doi.org/10.1134/S1063783417040047
- ID: 200004
Дәйексөз келтіру
Аннотация
The capacitance, inductance, and dissipation factor of the GdxBi1–xFeO3 films were measured in the temperature range of 100 K < T < 800 K in magnetic fields of up to 8 kOe at frequencies of 0.1–100 kHz. The magnetic susceptibility maxima in the low-temperature region and dependences of the relaxation time and inductance on prehistory of the films cooled in zero and nonzero magnetic fields are established. The giant increase in magnetic capacitance in the external bias electric field is found. The results obtained are explained by the domain structure transformation in external electric and magnetic fields.
Авторлар туралы
S. Aplesnin
Siberian State Aerospace University; Kirensky Institute of Physics, Federal Research Center, Siberian Branch
Хат алмасуға жауапты Автор.
Email: apl@iph.krasn.ru
Ресей, Krasnoyarsk, 660014; Krasnoyarsk, 660036
V. Kretinin
Siberian State Aerospace University
Email: apl@iph.krasn.ru
Ресей, Krasnoyarsk, 660014
A. Panasevich
Scientific and Practical Materials Research Center
Email: apl@iph.krasn.ru
Белоруссия, Minsk, 220072
K. Yanushkevich
Scientific and Practical Materials Research Center
Email: apl@iph.krasn.ru
Белоруссия, Minsk, 220072
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