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Vol 61, No 12 (2019)
GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
Rodin S.N., Lundin W.V., Tsatsulnikov A.F., Sakharov A.V., Usov S.O., Mitrofanov M.I., Levitskii I.V., Evtikhiev V.P., Kaliteevski M.A.
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(Eng)
Vol 61, No 12 (2019)
Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface
Kozhukhov A.S., Aleksandrov I.A., Rzheutski N.V., Lebiadok E.V., Razumets E.A., Zhuravlev K.S., Milakhin D.S., Malin T.V., Mansurov V.G., Galitsyn Y.G.
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(Eng)
Vol 61, No 12 (2019)
Growing Bulk Aluminum Nitride and Gallium Nitride Crystals by the Sublimation Sandwich Method
Mokhov E.N., Wol’fson A.A., Kazarova O.P.
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(Eng)
Vol 61, No 12 (2019)
Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates
Mizerov A.M., Kukushkin S.A., Sharofidinov S.S., Osipov A.V., Timoshnev S.N., Shubina K.Y., Berezovskaya T.N., Mokhov D.V., Buravlev A.D.
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(Eng)
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