Email this article The Study of Features of Formation and Properties of A3B5 Semiconductors Highly Doped with Iron
- Authors: Danilov Y.A.1, Kudrin A.V.1, Lesnikov V.P.1, Vikhrova O.V.1, Kryukov R.N.1, Antonov I.N.1, Tolkachev D.S.1, Alaferdov A.V.2, Kun’kova Z.E.3, Temiryazeva M.P.3, Temiryazev A.G.3
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Center for Semiconductor Components and Nanotechnologies, State University of Campinas
- Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Issue: Vol 60, No 11 (2018)
- Pages: 2178-2181
- Section: Semiconductors
- URL: https://ogarev-online.ru/1063-7834/article/view/204258
- DOI: https://doi.org/10.1134/S1063783418110033
- ID: 204258
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Abstract
Abstract—Layers of InAs, InSb, and GaSb semiconductors highly doped with iron during their growth by the method of pulsed laser deposition are studied experimentally. The best temperatures for layer formation on GaAs (100) substrates are: 250°C (InSb : Fe), 300°C (InAs : Fe), and 350°C (GaSb : Fe). At high Fe concentration (over 10 at %) the layers display ferromagnetic properties expressed in emergence of a hysteresis curve within the magnetic field dependences of the Hall resistance, negative magnetoresistance, and in some cases, ferromagnetic-type magnetization at measurements at room temperature. The atoms of iron do not change the type of layer conductivity; InAs : Fe and InSb : Fe layers possess n-type conductivity, and GaSb : Fe layers display p-type conductivity due to their intrinsic point defects.
About the authors
Yu. A. Danilov
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: danilov@nifti.unn.ru
Russian Federation, Nizhny Novgorod
A. V. Kudrin
Lobachevsky State University of Nizhny Novgorod
Email: danilov@nifti.unn.ru
Russian Federation, Nizhny Novgorod
V. P. Lesnikov
Lobachevsky State University of Nizhny Novgorod
Email: danilov@nifti.unn.ru
Russian Federation, Nizhny Novgorod
O. V. Vikhrova
Lobachevsky State University of Nizhny Novgorod
Email: danilov@nifti.unn.ru
Russian Federation, Nizhny Novgorod
R. N. Kryukov
Lobachevsky State University of Nizhny Novgorod
Email: danilov@nifti.unn.ru
Russian Federation, Nizhny Novgorod
I. N. Antonov
Lobachevsky State University of Nizhny Novgorod
Email: danilov@nifti.unn.ru
Russian Federation, Nizhny Novgorod
D. S. Tolkachev
Lobachevsky State University of Nizhny Novgorod
Email: danilov@nifti.unn.ru
Russian Federation, Nizhny Novgorod
A. V. Alaferdov
Center for Semiconductor Components and Nanotechnologies, State University of Campinas
Email: danilov@nifti.unn.ru
Brazil, Campinas
Z. E. Kun’kova
Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics,Russian Academy of Sciences
Email: danilov@nifti.unn.ru
Russian Federation, Fryazino, Moscow oblast,
M. P. Temiryazeva
Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics,Russian Academy of Sciences
Email: danilov@nifti.unn.ru
Russian Federation, Fryazino, Moscow oblast,
A. G. Temiryazev
Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics,Russian Academy of Sciences
Email: danilov@nifti.unn.ru
Russian Federation, Fryazino, Moscow oblast,
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