Energy Structure of an Individual Mn Acceptor in GaAs : Mn
- 作者: Dimitriev G.S.1, Krainov I.V.1,2, Sapega V.F.1, Averkiev N.S.1, Debus J.3, Lähderanta E.2
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隶属关系:
- Ioffe Institute
- Lappeenranta University of Technology
- Experimentelle Physik 2
- 期: 卷 60, 编号 8 (2018)
- 页面: 1568-1577
- 栏目: Semiconductors
- URL: https://ogarev-online.ru/1063-7834/article/view/203590
- DOI: https://doi.org/10.1134/S106378341808005X
- ID: 203590
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详细
The energy structure of the Mn acceptor, which is a complex of Mn2+ ion plus valence band hole, is investigated in the external magnetic field and under presence of an uniaxial stress has been studied. The spin-flip Raman spectra are studied under resonant excitation of exciton bound to the Mn acceptor. The gfactors of the ground F = 1 and the first excited F = 2 states are determined and selection rules for the optical transitions between the acceptor states are described. The value of the random field (stress or electric field) acting on manganese acceptor and the deformation potential for the exchange interaction constant of the Mn2+ + hole complex are obtained. A theoretical model is developed that takes into account the influence of random internal and uniaxial external stress and magnetic field. The proposed model describes well the lines of spin-flip Raman scattering of Mn acceptor.
作者简介
G. Dimitriev
Ioffe Institute
编辑信件的主要联系方式.
Email: dimitriev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Krainov
Ioffe Institute; Lappeenranta University of Technology
Email: dimitriev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; Lappeenranta
V. Sapega
Ioffe Institute
Email: dimitriev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Averkiev
Ioffe Institute
Email: dimitriev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
J. Debus
Experimentelle Physik 2
Email: dimitriev@mail.ioffe.ru
德国, Dortmund
E. Lähderanta
Lappeenranta University of Technology
Email: dimitriev@mail.ioffe.ru
芬兰, Lappeenranta
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