Email this article Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state
- Authors: Talanin V.I.1, Talanin I.E.1
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Affiliations:
- Zaporizhzhya Institute of Economics and Information Technologies
- Issue: Vol 58, No 10 (2016)
- Pages: 2050-2054
- Section: Impurity Centers
- URL: https://ogarev-online.ru/1063-7834/article/view/198865
- DOI: https://doi.org/10.1134/S1063783416100371
- ID: 198865
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Abstract
The formation of silicon–carbon and silicon–oxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation. It has been confirmed that the complex formation begins in the vicinity of the crystallization front. It has been shown that the Vlasov model of a solid state can be used not only for the investigation of hypothetical ideal crystals, but also for the description of the formation of a defect structure of real crystals.
About the authors
V. I. Talanin
Zaporizhzhya Institute of Economics and Information Technologies
Author for correspondence.
Email: v.i.talanin@mail.ru
Ukraine, ul. Kiyashko 16b, Zaporizhzhya, 69015
I. E. Talanin
Zaporizhzhya Institute of Economics and Information Technologies
Email: v.i.talanin@mail.ru
Ukraine, ul. Kiyashko 16b, Zaporizhzhya, 69015
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