Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies
- 作者: Bazhenov N.L.1, Mynbaev K.D.1,2, Semakova A.A.2, Zegrya G.G.1
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隶属关系:
- Ioffe Institute
- ITMO University
- 期: 卷 53, 编号 4 (2019)
- 页面: 428-433
- 栏目: Spectroscopy, Interaction with Radiation
- URL: https://ogarev-online.ru/1063-7826/article/view/205920
- DOI: https://doi.org/10.1134/S1063782619040043
- ID: 205920
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详细
Expressions for the Auger- and radiative-recombination rates are derived in terms of Kane’s model for materials with a band-gap width close to the spin-orbit splitting energy, which is the case for InAs, InAsSb solid solutions, etc. Our results are compared with simplified expressions for recombination rates, frequently used in publications. It is shown that the nonparabolicity of the electronic structure should be taken into account in calculations of the recombination rates. As an example, the temperature dependences of the charge-carrier lifetimes governed by radiative and non-radiative processes are calculated for InAsSb solid solutions.
作者简介
N. Bazhenov
Ioffe Institute
编辑信件的主要联系方式.
Email: bazhnil.ivom@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
K. Mynbaev
Ioffe Institute; ITMO University
Email: bazhnil.ivom@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101
A. Semakova
ITMO University
Email: bazhnil.ivom@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
G. Zegrya
Ioffe Institute
Email: bazhnil.ivom@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
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