Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies


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Expressions for the Auger- and radiative-recombination rates are derived in terms of Kane’s model for materials with a band-gap width close to the spin-orbit splitting energy, which is the case for InAs, InAsSb solid solutions, etc. Our results are compared with simplified expressions for recombination rates, frequently used in publications. It is shown that the nonparabolicity of the electronic structure should be taken into account in calculations of the recombination rates. As an example, the temperature dependences of the charge-carrier lifetimes governed by radiative and non-radiative processes are calculated for InAsSb solid solutions.

作者简介

N. Bazhenov

Ioffe Institute

编辑信件的主要联系方式.
Email: bazhnil.ivom@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

K. Mynbaev

Ioffe Institute; ITMO University

Email: bazhnil.ivom@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101

A. Semakova

ITMO University

Email: bazhnil.ivom@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101

G. Zegrya

Ioffe Institute

Email: bazhnil.ivom@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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