Отправить статью по E-mail Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices
- Авторы: Obolenskaya E.S.1, Ivanov A.S.1, Pavelyev D.G.1, Kozlov V.A.1,2, Vasilev A.P.3,4
-
Учреждения:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Research and Engineering Center for Submicron Heterostructures for Microelectronics
- Ioffe Institute
- Выпуск: Том 53, № 9 (2019)
- Страницы: 1192-1197
- Раздел: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://ogarev-online.ru/1063-7826/article/view/206763
- DOI: https://doi.org/10.1134/S1063782619090124
- ID: 206763
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
A comparison of the features of electron transport in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a similar design is performed. However, the number of periods and diode areas are different. The values of the parasitic resistances of the near-contact diode regions are correlated, and the specific voltage drop across one superlattice period is determined for all special points in the current–voltage characteristics of the diodes. The mechanism of the appearance of stable current oscillations in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a high doping level is investigated.
Ключевые слова
Об авторах
E. Obolenskaya
Lobachevsky State University of Nizhny Novgorod
Автор, ответственный за переписку.
Email: bess009@mail.ru
Россия, Nizhny Novgorod, 603950
A. Ivanov
Lobachevsky State University of Nizhny Novgorod
Email: bess009@mail.ru
Россия, Nizhny Novgorod, 603950
D. Pavelyev
Lobachevsky State University of Nizhny Novgorod
Email: bess009@mail.ru
Россия, Nizhny Novgorod, 603950
V. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences
Email: bess009@mail.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603087
A. Vasilev
Research and Engineering Center for Submicron Heterostructures for Microelectronics; Ioffe Institute
Email: bess009@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
Дополнительные файлы
