Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography

Аннотация

Quasi-one-dimensional semiconductor structures with a variable longitudinal potential profile are fabricated by pulse power nanolithography, which is carried out using an atomic force microscope. Structures are fabricated on the basis of AlGaAs/GaAs heterostructures with a deep (130 nm from the surface) twodimensional electron gas. The channel potential profile is formed with the help of sectioned in-plane gates formed on both channel sides. The electrical parameters of the structures measured at temperatures down to 1.5 K confirmed the efficiency of the applied method to fabricate insulating regions with lateral sizes of ~10 nm.