Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance

N. Yu. Gordeev; A. S. Payusov; I. S. Mukhin; A. A. Serin; M. M. Kulagina; Yu. A. Guseva; Yu. M. Shernyakov; Yu. M. Zadiranov; M. V. Maximov

doi:10.1134/S1063782619020106

Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance

Autores: Gordeev N.Y.¹, Payusov A.S.¹, Mukhin I.S.²^,3, Serin A.A.¹, Kulagina M.M.¹, Guseva Y.A.¹, Shernyakov Y.M.¹, Zadiranov Y.M.¹, Maximov M.V.²
Afiliações:
1. Ioffe Institute
2. St Petersburg Academic University
3. ITMO University
Edição: Volume 53, Nº 2 (2019)
Páginas: 200-204
Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
URL: https://ogarev-online.ru/1063-7826/article/view/205700
DOI: https://doi.org/10.1134/S1063782619020106
ID: 205700

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A post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots.