Diode Lasers with Near-Surface Active Region

A. S. Payusov; N. Yu. Gordeev; A. A. Serin; M. M. Kulagina; N. A. Kalyuzhnyy; S. A. Mintairov; M. V. Maximov; A. E. Zhukov

doi:10.1134/S1063782618140233

Diode Lasers with Near-Surface Active Region

Авторы: Payusov A.S.¹^,2, Gordeev N.Y.¹, Serin A.A.¹, Kulagina M.M.¹, Kalyuzhnyy N.A.¹, Mintairov S.A.¹, Maximov M.V.², Zhukov A.E.²^,3
Учреждения:
1. Ioffe institute
2. St Petersburg National Research Academic University
3. Peter the Great Polytechnic University
Выпуск: Том 52, № 14 (2018)
Страницы: 1901-1904
Раздел: Lasers and Optoelectronic Devices
URL: https://ogarev-online.ru/1063-7826/article/view/205151
DOI: https://doi.org/10.1134/S1063782618140233
ID: 205151

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Edge-emitting diode lasers with shallow location of a quantum-well active region at a depth of 0.92 μm were developed and their thermal resistance was evaluated from the analysis of true spontaneous emission spectra through the top contact window. Owing to a close spacing between the active region and laser heatsink, effective heat removal is achieved under continuous wave operation that is characterized by a low value of specific thermal resistance of 6 × 10^–3 K/(W cm²).