Enviar artigo por via de e-mail MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates
- Autores: Reznik R.R.1,2,3,4, Kotlyar K.P.1, Soshnikov I.P.1,3, Kukushkin S.A.5, Osipov A.V.5, Cirlin G.E.1,2,3,4
-
Afiliações:
- St. Petersburg Academic University Russian Academy of Sciences
- ITMO University
- Institute for Analytical Instrumentation Russian Academy of Sciences
- Peter the Great Polytechnic University
- Institute of Problems of Mechanical Engineering Russian Academy of Science
- Edição: Volume 52, Nº 5 (2018)
- Páginas: 651-653
- Seção: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://ogarev-online.ru/1063-7826/article/view/203292
- DOI: https://doi.org/10.1134/S1063782618050251
- ID: 203292
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.
Sobre autores
R. Reznik
St. Petersburg Academic University Russian Academy of Sciences; ITMO University; Institute for Analytical Instrumentation Russian Academy of Sciences; Peter the Great Polytechnic University
Autor responsável pela correspondência
Email: moment92@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103; St. Petersburg, 195251
K. Kotlyar
St. Petersburg Academic University Russian Academy of Sciences
Email: moment92@mail.ru
Rússia, St. Petersburg, 194021
I. Soshnikov
St. Petersburg Academic University Russian Academy of Sciences; Institute for Analytical Instrumentation Russian Academy of Sciences
Email: moment92@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103
S. Kukushkin
Institute of Problems of Mechanical Engineering Russian Academy of Science
Email: moment92@mail.ru
Rússia, St. Petersburg, 199178
A. Osipov
Institute of Problems of Mechanical Engineering Russian Academy of Science
Email: moment92@mail.ru
Rússia, St. Petersburg, 199178
G. Cirlin
St. Petersburg Academic University Russian Academy of Sciences; ITMO University; Institute for Analytical Instrumentation Russian Academy of Sciences; Peter the Great Polytechnic University
Email: moment92@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103; St. Petersburg, 195251
Arquivos suplementares
