| Выпуск |
Название |
Файл |
| Том 52, № 5 (2018) |
Dip-Pen Nanolithography Method for Fabrication of Biofunctionalized Magnetic Nanodiscs Applied in Medicine |
(Eng)
|
|
Smolyarova T., Lukyanenko A., Tarasov A., Sokolov A.
|
| Том 52, № 5 (2018) |
Air-Oxidation of Nb Nano-Films |
(Eng)
|
|
Lubenchenko A., Batrakov A., Ivanov D., Lubenchenko O., Lashkov I., Pavolotsky A., Schleicher B., Albert N., Nielsch K.
|
| Том 52, № 5 (2018) |
Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation |
(Eng)
|
|
Kazantsev D., Akhundov I., Alperovich V., Shwartz N., Kozhukhov A., Latyshev A.
|
| Том 52, № 5 (2018) |
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands |
(Eng)
|
|
Evropeytsev E., Semenov A., Nechaev D., Jmerik V., Kaibyshev V., Troshkov S., Brunkov P., Usikova A., Ivanov S., Toropov A.
|
| Том 52, № 5 (2018) |
Ion Synthesis: Si–Ge Quantum Dots |
(Eng)
|
|
Gerasimenko N., Balakleyskiy N., Volokhovskiy A., Smirnov D., Zaporozhan O.
|
| Том 52, № 5 (2018) |
New Method of Porous Ge Layer Fabrication: Structure and Optical Properties |
(Eng)
|
|
Gorokhov E., Astankova K., Azarov I., Volodin V., Latyshev A.
|
| Том 52, № 5 (2018) |
Fabrication of Silicon Nanostructures for Application in Photonics |
(Eng)
|
|
Kamalieva A., Toropov N., Vartanyan T., Baranov M., Parfenov P., Bogdanov K., Zharova Y., Tolmachev V.
|
| Том 52, № 5 (2018) |
Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography |
(Eng)
|
|
Lukyanenko A., Smolyarova T.
|
| Том 52, № 5 (2018) |
Сoncentric GaAs Nanorings Growth Modelling |
(Eng)
|
|
Nastovjak A., Neizvestny I., Vasilenko M., Shwartz N.
|
| Том 52, № 5 (2018) |
Nanoparticle Formation in Zn+ and O+ Ion Sequentially Implanted SiO2 Film |
(Eng)
|
|
Privezentsev V., Makunin A., Batrakov A., Ksenich S., Goryachev A.
|
| Том 52, № 5 (2018) |
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates |
(Eng)
|
|
Reznik R., Kotlyar K., Soshnikov I., Kukushkin S., Osipov A., Cirlin G.
|
| Том 52, № 5 (2018) |
Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001) |
(Eng)
|
|
Tarasov I., Rautskii M., Yakovlev I., Volochaev M.
|
| Том 52, № 5 (2018) |
Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy |
(Eng)
|
|
Timoshnev S., Mizerov A., Sobolev M., Nikitina E.
|
| Том 52, № 5 (2018) |
Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing |
(Eng)
|
|
Vasev A., Putyato M., Preobrazhenskii V., Bakarov A., Toropov A.
|
| Том 52, № 5 (2018) |
Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE |
(Eng)
|
|
Jmerik V., Shubina T., Nechaev D., Semenov A., Kirilenko D., Davydov V., Smirnov A., Eliseev I., Posina G., Ivanov S.
|
| Том 52, № 5 (2018) |
Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold |
(Eng)
|
|
Gladskikh I., Gushchin M., Vartanyan T.
|
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